| PART |
Description |
Maker |
| MMBF0201NLT1 MMBF0201NL MMBF0201NLT1-D |
Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
| MMBF2202PT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ON Semiconductor
|
| MMBF2202PT1G MMBF2202PT106 MMBF2202PT1 |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| MMBF2201NT1G MMBF2201NT106 MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS84LT1G LBSS84LT3G |
Power MOSFET F30 mAmps, 50 Volts
|
Leshan Radio Company
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| BSV52LT1 BSV52L BSV52LT1-D BSV52LT1/D |
Switching Transistor (NPN Silicon)
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
|
ON Semiconductor
|
| SS14T3 |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
